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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB720
DESCRIPTION *With TO-220 package *High VCEO *High power dissipation APPLICATIONS *Power amplifier *TV vertical deflection output
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -200 -200 -5 -2.0 -3.0 25 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-5mA ,IB=0 IC=-0.1mA ,IE=0 IE=-0.1mA ,IC=0 IC=-500mA; IB=-50mA IC=-500mA; IB=-50mA VCB=-200V; IE=0 VEB=-5V; IC=0 IC=-0.15A ; VCE=-5V IC=-0.15A ; VCE=-5V 35 MIN -200 -200 -5
2SB720
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT
TYP.
MAX
UNIT V V V
-1.0 -1.5 -10 -10 200 100
V V A A
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB720
Fig.2 Outline dimensions(unindicated tolerance:0.10 mm)
3


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